unisonic technologies co., ltd mmbt3906 pnp silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r206-013.d general purpose appliation ? features * collector-emitter voltage: v ceo =40v * collector dissipation: p d(max) =350mw * complementary to utc mmbt3904 lead-free: mmbt3906l halogen-free: mmbt3906g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing mmbt3906-ae3-r mmbt3906l-ae3-r MMBT3906G-AE3-R sot-23 e b c tape reel mmbt3906-al3-r mmbt3906l-al3-r mmbt 3906g-al3-r sot-323 e b c tape reel ? marking 2a. l: lead free g: halogen free
mmbt3906 pnp silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-013.d ? absolute maximum rating (ta=25 , unless otherwise specified) parameter symbol ratings unit collector base voltage v cbo -40 v collector emitter voltage v ceo -40 v emitter base voltage v ebo -5 v collector current i c -200 ma base current i b -50 ma collector dissipation p c 350 mw junction temperature t j 150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cex v ce =-30v, v eb =-3v -50 na base cut-off current i bl v ce =-30v, v eb =-3v -50 na collector-base breakdown voltage v cbo i c =-10 a,i e =0 -40 v collector-emitter breakdown voltage (note) v ceo i c =-1ma, i b =0 -40 v emitter-base breakdown voltage v ebo i e =-10 a, i c =0 -6 v h fe1 v ce =-1v, i c =-0.1ma 60 h fe2 v ce =-1v, i c =-1ma 80 h fe3 v ce =-1v, i c =-10ma 100 300 h fe4 v ce =-1v, i c =-50ma 60 dc current gain (note) h fe5 v ce =-1v, i c =-100ma 30 v ce(sat) 1 i c =-10ma, i b =-1ma -0.25 v collector-emitter satura tion voltage (note) v ce(sat) 2i c =-50ma, i b =-5ma -0.4 v v be(sat) 1 i c =-10ma, i b =-1ma -0.65 -0.85 v base-emitter satu ration voltage v be(sat) 2i c =-50ma, i b =-5ma -0.95 v transition voltage f t v ce =-20v, i c =-10ma, f=100mhz 250 mhz output capacitance c ob v cb =-5v,i e =0, f=1mhz 4.5 pf turn on time t on v cc =-3v, v be =-0.5v, i c =-10ma, i b1 =-1ma 70 ns turn off time t off i b1 =1 b2 =-1ma 300 ns note: pulse test: pw Q 300 s, duty cycle Q 2%
mmbt3906 pnp silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-013.d ? typical characteristics dc current gain collector current, i c (ma) -3 -5 -10 -30 -50 -100 -300 -1000 30 10 50 100 300 1000 dc current gain, h fe v ce =-20v current gain-bandwidth product collector current, i c (ma) -1 -0.3 -0.5 -1 -3 -5 -10 -30 -50 -100 -0.1 10 30 50 100 300 500 1000 current gain-bandwidth product, f t (mhz) 500 v ce =-1v v ce =10v v ce =1v i e =0 f=100khz base-emitter saturation voltage collector-emitter saturation voltage collector current, i c (ma) -0.01 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 i c =10 i b saturation voltage, v be(sat) , v ce(sat) (v) -100 -50 -30 -10 -5 -3 -1 0 2 4 6 8 10 12 output capacitance collector-base voltage, v cb (v) capacitance, c ob (pf) -0.3 -0.5 -1 -3 -5 -10 -30 -50 -100 -0.1 v be(sat) v ce(sat) -30 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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